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1N6630US

Part Number
1N6630US<
Manufacturer
Microsemi Corporation<
Description
DIODE GEN PURP 900V 1.4A D5B<
Data sheet
1N6630US

Specifications

Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 900V
Current - Average Rectified (Io) 1.4A
Voltage - Forward (Vf) (Max) @ If 1.7V @ 3A
Speed Fast Recovery =< 500ns,=""> 200mA (Io)
Reverse Recovery Time (trr) 50ns
Current - Reverse Leakage @ Vr 4µA @ 100V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case E-MELF
Supplier Device Package D-5B
Operating Temperature - Junction -65°C ~ 150°C
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.