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1N6080US

Part Number
1N6080US<
Manufacturer
Microsemi Corporation<
Description
DIODE GEN PURP 100V 2A G-MELF<
Data sheet
1N6080US

Specifications

Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 2A
Voltage - Forward (Vf) (Max) @ If 1.5V @ 37.7A
Speed Fast Recovery =< 500ns,=""> 200mA (Io)
Reverse Recovery Time (trr) 30ns
Current - Reverse Leakage @ Vr 10µA @ 100V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case SQ-MELF, G
Supplier Device Package G-MELF (D-5C)
Operating Temperature - Junction -65°C ~ 155°C
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.